基于SiC变换电路的高效快速光伏MPPT技术

High efficiency and fast speed photovoltaic MPPT technology based on SiC conversion circuit

在高效光伏发电电能变换领域,采用新一代Si C半导体器相对于传统Si基器件具有众多优点,对基于Si C变换电路的高效光伏最大功率点跟踪(MPPT)技术进行了研究。根据光伏发电的温度和光照影响特性,将温度变化作为电导增量法的步长参考变量,提出了一种改进型的高效MPPT跟踪控制方法,有效提升常规电导增量控制的性能,提高MPPT的跟踪速度和控制精度。利用Matlab仿真实验平台进行了仿真分析,并研制了基于Si C的Boost变换电路测试平台进行验证。仿真和实验结果均表明,所提出的方法 MPPT跟踪效率高,相对于常规的Si基变换器和MPPT技术,可以有效提高跟踪控制效率,适合在光伏发电系统等工程领域推广应用。

In the field of high efficiency photovoltaic power generation, the new generation of SiC semiconductor has many advantages over traditional Si-based devices. The high efficiency photovoltaic MPPT technology based on SiC conversion circuit was studied. According to the temperature and illumination influence characteristics of photovoltaic power generation, the factor of temperature change was used as the step reference variable of the conductance increment method, and the improved high efficiency MPPT tracking control method was proposed, greatly improving the performance of conventional conductance incremental control and tracking speed and control precision of MPPT. The prototype of SiC-based Boost converter was developed to verify the superiority of the proposed method. The experimental results show that the proposed method has the highest MPPT tracking efficiency of 99.9%. Compared with the conventional Si-based converter and MPPT technology, it can effectively improve the tracking control efficiency and is suitable for popularization and application in engineering projects such as photovoltaic power generation systems.