MoS2基复合结构的合成及半导体器件应用新进展

Research progress in synthesis of MoS2-based complex structure and its application for semiconductor device

MoS2是典型过渡金属硫化物之一,其带隙能较窄,在半导体器件等方面具有极大的应用前景。MoS2纳米材料作为理想的低功率半导体电子器件,在纳米集成电子或光子系统中有广泛应用。针对国内外最新研究情况,综述了MoS2纳米复合材料的制备方法及其在半导体器件领域的最新应用研究进展,并探讨其未来发展方向。

MoS2is one of the typical layered transition metal sulfur compounds with narrow band gap,which has agreat application prospect in semiconductor device.As an ideal low power semiconductor electronic device,MoS2nano materials can be widely applied in nano integrated nanoelectronic/photonic systems.Considered of the latest research progress at home and abroad,the preparation of MoS2-based nanocomposites and its application in semiconductor device were reviewed and the future development direction was discussed.