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Recent progress in stretchable organic field-effect transistors 被引量:5

Recent progress in stretchable organic field-effect transistors
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摘要 Stretchable organic field-effect transistors (STOFETs) employing organic semiconductors as active layers are highly attractive ongoing from health monitoring to biological research owing to some favorable advantages over their inorganic counterpart, including light weight, low cost, solution processing, high flexibility and simple adjustment of functionalities through molecular design. Although the development of STOFETs with original electrical performances under large mechanical deformation remain rudimentary, major efforts have recently been devoted to the investigation on STOFETs, and remarkable advances in stretchable components and novel fabrication methods have been achieved. A detailed overview of the advantages, challenges and current achievements in STOFETs was given including stretchable electrodes, semiconductors, dielectrics and substrates. Furthermore, conclusions and prospects for the future development of STOFETs with both high stretchability and superb electrical performances fabricated using intrinsically stretchable components are proposed. Stretchable organic field-effect transistors(STOFETs) employing organic semiconductors as active layers are highly attractive ongoing from health monitoring to biological research owing to some favorable advantages over their inorganic counterpart,including light weight, low cost, solution processing, high flexibility and simple adjustment of functionalities through molecular design. Although the development of STOFETs with original electrical performances under large mechanical deformation remain rudimentary, major efforts have recently been devoted to the investigation on STOFETs, and remarkable advances in stretchable components and novel fabrication methods have been achieved. A detailed overview of the advantages, challenges and current achievements in STOFETs was given including stretchable electrodes, semiconductors, dielectrics and substrates.Furthermore, conclusions and prospects for the future development of STOFETs with both high stretchability and superb electrical performances fabricated using intrinsically stretchable components are proposed.
出处 《Science China(Technological Sciences)》 SCIE EI CAS CSCD 2019年第8期1255-1276,共22页 中国科学(技术科学英文版)
基金 supported by the National Natural Science Foundation of China(Grant Nos.51873216&21633012) the National Key R&D Pro-gram of “Strategic Advanced Electronic Materials”(Grant No.2016YFB0401100) the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB30000000) the CAS Key Research Program of Frontier Sciences(Grant No.QYZDYSSW-SLH029) the Beijing Nova Program(Grant No.Z181100006218034)
关键词 STOFETs ORGANIC SEMICONDUCTOR HIGH stretchability HIGH CARRIER MOBILITY STOFETs organic semiconductor high stretchability high carrier mobility
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