磁控溅射反应法制备TiN纳米薄膜

TiN Nano-Thin Films Prepared by Magnetron Sputtering Reaction

为研究N2压强以及流量在磁控溅射中对TiN薄膜生长的影响,通过改变N2气压以及流量使用射频磁控溅射设备在基片温度为300℃,时长2h下生长TiN薄膜。采用电子扫描显微镜(SEM)表征薄膜形貌,获得不同的TiN薄膜微观图像。通过改变工艺参数,可以制备具有不同微观形貌的TiN薄膜。

To study the effect of N2 pressure and flow on the growth of TiN films in magnetron sputtering,TiN films were grown at a substrate temperature of 300℃for 2 hours using radio frequency magnetron sputtering equipment to change the air pressure and flow of N2.The morphology of TiN films was characterized by electron scanning microscopy.TiN films with different micro morphology can be prepared by changing technological parameters.