MJTR硅单晶辐照技术改进研究

Improvement of Irradiation Technology for Mono-Crystalline Silicon in MJTR

为了具备8 inch(1 inch=2.54 cm)硅单晶辐照生产能力,同时进一步提高硅单晶辐照质量,对岷江试验堆(MJTR)硅单晶辐照技术进行改进研究。通过在辐照孔道增加中子屏布置改善硅单晶辐照的不均匀性,在辐照孔道外增加反射层布置提高辐照孔道热中子注量率,满足了8inch硅单晶辐照要求;同时对硅单晶辐照操作工艺进行优化设计,并对半自动辐照控制工艺进行了设计改进。硅单晶辐照技术改进后,每罐硅操作时间缩短了一半左右,辐照罐数可增加2%,辐照生产效率提升显著。

In order to achieve the irradiation ability for 8 inch mono-crystalline silicon, also to improve the irradiation quality, this paper studies and improves the irradiation technology for mono-crystalline Silicon in Min Jiang Test Reactor (MJTR). Neutron screen is set inside the irradiation tube to reduce the irradiation uniformity, and the layout of the reflector is increased to achieve higher thermal neutron flux, in order to meet the requirement of 8inch mono-crystalline silicon irradiation. Meanwhile, this paper optimizes the irradiation process, and designs and improves the semi-automatic control process. After the improvement of irradiation technology, the operation time is shortened by about half, the number of irradiation tanks can be increased by 2%, and the efficiency of irradiation production is improved significantly.