化学机械抛光后清洗专利技术综述

化学机械抛光(Chemical Mechanical Polishing,CMP)清洗的目的就是把CMP中的残留粒子和金属沾污减少到可接受的水平,后清洗是CMP加工的重要部分.文章通过对全球专利申请量、专利申请在不同国家的分布、重要申请人分布进行分析,概述了CMP后清洗技术的发展脉络,为日后CMP后清洗技术的发展提供了借鉴.

The purpose of chemical mechanical polishing(CMP) cleaning is to reduce residual particles and metal contamination in CMP to an acceptable level. Post CMP cleaning is an important part of CMP processing. This paper summarizes the development of post CMP cleaning technology by analyzing the global application volume, the distribution of patent applications in different countries, the distribution of original national applications, and the distribution of important applicants, in order to provide a reference for the development of post CMP cleaning technology.