金属-氧化物-半导体硅发光器件在集成电路中的应用前景

Application prospect of metal-oxide-semiconductor silicon light emitting devices in integrated circuits

集成硅光电子学的目的之一就是为大众市场创造应用广泛、成本低廉的光子互连工具.随着摩尔定律逼近理论极限,集成芯片的金属互连越来越跟不上芯片体积微型化、频率高速化和功耗分配精益化的需求.本文基于硅基发光器件的发展历程,详细论证了金属-氧化物-半导体结构硅发光器件在未来集成电路中的合理应用,提出了全硅光电集成电路在理论和工艺上的可行性.这种电路突破了传统芯片电互连码之间串扰的瓶颈,改善之后的互连速度理论可达光速,有望成为新一代集成芯片的主流.

Photonic interconnects have potentials to break increasingly severe energy efficiency and bandwidth densitybottlenecks of electrical interconnect in scaled complementary metal oxide semiconductor (CMOS) integratedcircuits, leading to the emergence of optoelectronic integrated circuits (OEICs) that utilize electronic andphotonic devices together in a synergistic way to achieve better performance than those based on pure electronicdevice technology. By reviewing the progresses of Si-based light-emitting device, the schematic of MOS-likelight source integrated with waveguides and the following photodetector is analyzed for its availability. It isbelieved that on-chip optical interconnects could be achieved by standard CMOS technology successfully withthe speed as fast as the velocity of light, supplying propulsions for nest-generation OEICs.