摘要
With the increasing interest in Cu2O-based devices for photovoltaic applications,the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention.In this work,a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2 O3 substrate by laser-molecular beam epitaxy,and the energy band alignment is determined by x-ray photoelectron spectroscopy.The valence band of ZnO is found to be 1.97 eV below that of Cu2O.A type-II band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV,which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.
With the increasing interest in Cu2O-based devices for photovoltaic applications, the energy band alignment at the Cu2O/ZnO heterojunction has received more and more attention. In this work, a high-quality Cu2O/ZnO heterojunction is fabricated on a c-Al2 O3 substrate by laser-molecular beam epitaxy, and the energy band alignment is determined by x-ray photoelectron spectroscopy. The valence band of ZnO is found to be 1.97 eV below that of Cu2O. A type-II band alignment exists at the Cu2O/ZnO heterojunction with a resulting conduction band offset of 0.77 eV, which is especially favorable for enhancing the efficiency of Cu2O/ZnO solar cells.
作者
赵妍
尹泓卜
符亚军
王雪敏
吴卫东
Yan Zhao;Hong-Bu Yin;Ya-Jun Fu;Xue-Min Wang;Wei-Dong Wu
基金
Project supported by the National Natural Science Foundation of China(Grant No.11404302)
the Laser Fusion Research Center Funds for Young Talents,China(Grant No.RCFPD1-2017-9)
