摘要
采用平板式等离子体增强化学气相沉积(PECVD)设备,开展氧化铝(Al2O3)薄膜沉积工艺的研究。通过在p型单晶硅片背表面沉积Al2O3和氮化硅(SiNx)薄膜,形成Al2O3/SiNx叠层钝化膜,研究了Al2O3薄膜沉积工艺中加热温度、工艺传送速度、微波功率、三甲基铝(TMA)流量等工艺参数对钝化效果的影响,得到了最佳的工艺参数:加热温度350℃、工艺传送速度240cm/min、微波功率521W、TMA流量600mg/min。在该工艺条件下进行Al2O3/SiNx叠层钝化膜的沉积,测试硅片的平均少子寿命达到335.7μs。在此基础上进行PERC电池生产,电池转换效率达到21.876%。
A plasma enhanced chemical vapor deposition (PECVD) device was used to study the deposition process of Al2O3. An Al2O3 and silicon nitride (SiNx) film was deposition on p type monocrystalline silicon wafer back surface to form Al2O3 / SiNx passivation film. Study the effects of heating temperature, transfer rate, microwave power, trimethyl aluminum (TMA) flow in the deposition process of Al2O3, which influencing on the passivation effect. The best process parameters was obtained, the heating temperature was 350 ℃, the technology transfer speed was 240 cm/min, the microwave power was 521 W, and the TMA flow was 600 mg/min. By deposition of Al2O3/ SiNx film under this process, the average minority carrier lifetime of silicon wafers reached 335.7 μs. The PERC cell was produced, and the conversion efficiency reached 21.876%.
作者
许烁烁
陈特超
禹庆荣
刘舟
XU Shuoshuo;CHEN Techao;YU Qingrong;LIU Zhou(The 48^th Research Institute of CETC, Changsha 410111, China)
出处
《电子工业专用设备》
2019年第4期17-20,共4页
Equipment for Electronic Products Manufacturing
关键词
光伏装备
沉积工艺
氧化铝薄膜
少子寿命
Photovoltaic equipment
Deposition process
Al2O3 thin film
Minority carrier lifetime
