期刊文献+

一种新型串联功率半导体器件的隔离供电系统 被引量:1

A Novel Electrical Isolated Power Supply System for Series Connected Semiconductor Devices
下载PDF
导出
摘要 在此提出了一种用于串联半导体器件的多路输出隔离供电系统。该系统运用了变压器松耦合的原理,同时具有高压隔离、小型化、模块化的优点。模块化设计使得该系统易扩展,进而用于由更多半导体器件串联的更高电压等级的半导体开关供电。该供电系统采用反激式电路原理,运用了有源功率因数调节功能减少高次谐波,随后对其关键参数进行了选值和优化。基于该隔离供电系统设计思路,搭建了由14个IGBT串联,可耐压40 kV的高压开关,并通过实验验证其可靠性。实验结果证明,该系统可为多路IGBT驱动电路提供稳定的18 V供电电压,且IGBT动作正常。 The structure of a novel electrical isolated power supply system for series connected semiconductor devices is illustrated , which involves a novel circuit topology based on transformer loose coupling technology.The power supply system has the advantages of electrical isolation , miniaturization and modularization.It is easy to extend to higher voltage rating, because of its feature of modularization .The topology of the system is flyback circuit.The system has the function of power factor correction to reduce the influence of harmonic.The key parameters are selected and optimized. A high voltage switch rated 40 kV consisting of 14 series connected IGBTs is fabricated and experimental study is made to improve its feasibility.The final results proves that the power supply system can supply power for multiple series connected IGBTs simultaneously and ensure the IGBTs are activated normally.
作者 赵学风 蒲路 段玮 李洪杰 ZHAO Xue-feng;PU Lu;DUAN Wei;LI Hong-jie(State Grid Shaanxi Electric Pou)er Research Institute ,Xi' an 710054 ,China)
出处 《电力电子技术》 CSCD 北大核心 2019年第8期70-73,共4页 Power Electronics
基金 陕西省2018年重点研发计划(2018GY-001)~~
关键词 电源 隔离 半导体 power supply isolation semiconductor
  • 相关文献

参考文献2

二级参考文献12

  • 1International Rectifier Inc.Pvin Datasheets[EB/OL].http://www.irf.com/product-info/datasheets/pvin.pdf.2005-5-10.
  • 2Zhang Fei,Shi Lina,Li Chengfang.A Novel High Performance Insulated Gate Bipolar Transistor[J].Solid-State Electronics.2006,50(7-8):1201-1205.
  • 3BAEK J W,YOO D W,KIM H G. High-voltage switch using series-connected IGBTs with simple auxiliary circuit[J].{H}IEEE Transactions on Industry Applications,2001,(6):1832-1839.doi:10.1109/28.968198.
  • 4PALMER P R,GITHIARI A N. The series connection of IGBTs with active voltage sharing[J].{H}IEEE Transactions on Power Electronics,1997,(4):637-644.doi:10.1109/63.602558.
  • 5ZORNGIEBEL V,SPAHN E,BUDERER G. Compact high voltage IGBT switch for pulsed power applications[J].{H}IEEE Transactions on Magnetics,2009,(1):531-535.
  • 6SASAGAWA K,ABE Y,MATSUSE K. Voltage-balancing method for IGBTs connected in series[J].{H}IEEE Transactions on Industry Applications,2004,(4):1025-1030.doi:10.1109/TIA.2004.830794.
  • 7CASTAGNO S,CURRY R D,LOREE E. Analysis and comparison of a fast turn-on Series IGBT stack and highvoltage-rated commercial IGBTs[J].IEEE Transactions Plasma Science,2006,(5):1692-1696.
  • 8SAIZ J,MERMET M,FREY D. Optimization and integration of an active clamping circuit for IGBT series association[A].2001.1046-1051.
  • 9ZHENG Sheng,WANG You-sheng,WU Xin-ke. The voltage sharing of commercial IGBTS in series with passive components[A].2011.3008-3012.
  • 10JANG S R,AHN S H,RYOO H J. A comparative study of the gate driver circuits for series stacking of semiconductor switches[A].2010.322-326.

共引文献8

同被引文献15

引证文献1

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部