(Ti,Ta)N三元薄膜的制备和表征

Synthesis and Characterization of (Ti,Ta)N Ternary Coatings on Si Wafer

在用真空阴极弧制备TiN和TaN两种薄膜的基础上,采用两个独立的金属弧源同时放电的方法成功制备出(Ti,Ta)N三元薄膜。通过X射线衍射、X射线光电子能谱、原子力显微镜对TiN、TaN和(Ti,Ta)N薄膜的微结构、化学组分、表面形貌进行了比较分析,发现制备的(Ti,Ta)N三元薄膜是以立方结构为主的固溶体相构成,另外还存在单斜结构的Ta3N5相。与两种二元薄膜相比,其XRD图谱的衍射峰显著变宽,择优取向(200)的择优程度进一步加强。三元薄膜表面的Ti∶Ta∶N比为0.46∶0.34∶1,晶粒大小为纳米尺度。

The(Ti,Ta)N ternary coatings were synthesized by cathodic arc simultaneous co-deposition of Ti and Ta on Si(100) substrate.The influence of the independent Ti-and Ta-targets on the microstructures,phase-structures of the(Ti,Ta)N coatings was investigated with X-ray diffraction,X-ray photoelectron spectroscopy and atomic force microscopy.The results show that the simultaneous co-deposition of(Ti,Ta)N ternary coatings outperformed the conventional deposition of binary TiN and/or TaN coatings.To be specific,the grain sizes of(Ti,Ta)N coatings,comprising the dominant cubic-phased solid solution and some monoclinic Ta3N5 phase,were all at the nanometer scale with a narrow size distribution and with an element ratio∶Ti∶Ta∶N=0.46∶0.34∶1.As compared with the binary TiN and TaN coatings,the XRD peaks of(Ti,Ta)N ternary coatings were significantly broadened,and the <200> preferential grain-growth orientation of(Ti,Ta)N ternary coatings was even more pronounced.