期刊文献+

不同结构盒栅式电子倍增器模拟计算 被引量:2

Impact of Grid-Dynode Geometry on Characteristics of Box-Type Electron Multiplier: A Simulation Study
下载PDF
导出
摘要 利用CST三维电磁仿真软件对不同结构的盒栅式电子倍增器进行建模,采用控制变量的分析思想,模拟计算不同打拿极结构下的电子倍增器内电场分布、电子运动轨迹和倍增增益。数值仿真结果显示,不同结构打拿极电子倍增器内部电场稍有不同,并且导致倍增效益有所不同。在具有相同路径的8级打拿极结构的情况下,增益效果由强到弱的顺序为多边形、方形、弧形、三角形。多边形打拿极在二次电子发射材料镀膜区域不同的情况下,电子倍增器的增益效果具有很大的差异。 The field distributions,in the electron multiplier with eight stages of box-shaped grid-dynode assembly,were mathematically modeled,theoretically analyzed and numerically simulated with CST software.The influence of the box-shapes,including the boxes with a top-view of pentagon,square,quarter-circle and triangle,on the electric field profiles,electron trajectories and multiplication gains was investigated.The simulated results show that the box-shape has a major impact.To be specific,the impact factor of the box-shapes can be listed in a descending order: pentagon>square>quarter-circle>triangle.Theoretically speaking,the multiplication gain decreases from 835 to 65,because no secondary electron emission coatings are deposited on the two short-sides of the pentagon dynodes,made by truncating the two sharp angles of a right-angled triangle.We suggest that the simulated results be of some technological interest in design of box-type electron multiplier.
作者 王运佳 王一非 高连山 Wang Yunjia;Wang Yifei;Gao Lianshan(Beijing Institute of Radio Metrology and Measurement,Beijing 100854,China)
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2019年第8期709-713,共5页 Chinese Journal of Vacuum Science and Technology
关键词 盒栅式电子倍增器 电子轨迹 电子倍增器增益 CST模拟计算 Box type electron multiplier Electron trajectory Electron multiplier gain CST simulation
  • 相关文献

参考文献4

二级参考文献41

  • 1李野,高延军,王国政,付申成,吴奎,姜德龙,端木庆铎,田景全.新一代二维通道电子倍增器的薄膜连续打拿极[J].发光学报,2006,27(3):421-425. 被引量:2
  • 2殷明志,姚熹.MgO薄膜的制备和二次电子发射性能的表征[J].西北工业大学学报,2006,24(4):435-439. 被引量:5
  • 3CHOI E H, KIM Y G, FAN J C,et al. Measurement of Secondary Electron Emission Coefficient from MgO Protecting Layer[J]. JPN J Appl Phys, 1998,37(7) : 15-20.
  • 4YOON J, KIM K. Growth of (111) oriented MgO film on Si substrate by the sol-gel method [J]. Applied Physics Letters,1995, 66 ( 20 ) : 2661-2663.
  • 5LIS Y, YANG M H, Flynn C P. Low-temperature growth of MgO by molecular-beam epitaxy [J]. Physical Review, 1990, B41: 7961-7963.
  • 6A BOELFOTOH M O, PARK K C. Infrared and high-energy electron diffraction analyses of electron-beam-evaporated MgO films [J]. Journal of Applied Physics,1977,48(7) : 2910-2917.
  • 7杨邦明,王文生.薄膜物理与技术[M].成都:电子科技大学出版社,2005.
  • 8A BOELFOTH M O. Preferred orientations in MgO films deposited on amorphous substrates [J].Applied Physics Letters, 1974, 24 (8) : 347-349.
  • 9LEE J S, BYU B G, KWON H J, et al. Texture and cross-sectional microstructure of MgO films grown on silicon dioxide by electron-beam evaporation [J]. Thin Solid Films,1999,354:82-86.
  • 10SUGAWARA A,MAE K.Faceting of homoepitaxial MgO (110) layers prepared by electron beam evaporation [J].Surface Science, 2004,558 : 211-217.

共引文献20

同被引文献11

引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部