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半导体芯片制造过程中的关键─光刻技术 被引量:1

The key to the manufacturing process of semiconductor chips-lithography
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摘要 光刻是半导体芯片制备过程中最为关键的一步,该技术所能实现的精度决定了芯片单位面积上集成晶体管的数目,也决定了芯片所能实现运算水平的高低。本文重点介绍了光刻技术的工作原理,光刻的分辨率及其影响因素,以及光刻机的发展史与格局,并对光刻技术今后的发展进行了前瞻。 Lithography is the most critical step in the preparation of semiconductor chips. The precision that can be achieved by this technology determines the number of integrated transistors per unit area of the chip, and also determines the level of operation that the chip can achieve. This paper focuses on the working principle of lithography, the resolution of lithography and its influencing factors, as well as the development history and pattern of lithography machine, and the future development of lithography technology.
作者 秦朗 Qin lang
机构地区 南京市第九中学
出处 《数码设计》 2019年第7期99-99,共1页 Peak Data Science
关键词 光刻 光刻机 分辨率 lithography lithography machine resolution
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  • 1袁琼雁,王向朝,施伟杰,李小平.浸没式光刻技术的研究进展[J].激光与光电子学进展,2006,43(8):13-20. 被引量:16
  • 2[1]International Technology Roadmap for Semiconductors,1999 Edition
  • 3[2]Ghani T,Mistry K,Packan P,et al.Asymmetric source/drain extension transistor structure for high performance sub-50nm gate length CMOS devices.Symp VLSI Tech Dig,2001:17
  • 4[3]Yu B,Wang H,Xiang Q,et al.Scaling towards 35nm gatelength CMOS.Symp VLSI Tech Dig,2001:9
  • 5[4]Holmes S J,Mitcheli P H,Hakey M.Manufacturing withDUV lithography.IBM J Res Develop,1997,41(1/2):7
  • 6[5]Chiu G L T,Shaw J M.Optical lithography:introduction.IBM J Res Develop,1997,41(1/2):3
  • 7[6]Rothschild M,Forte A R,Kunz R R,et al.Lithography at a wavelength of 193nm.IBM J Res Develop,1997,41(1/2):49
  • 8[7]Bloomstein T M,Rothschild M,Kunz R R,et al.Critical issues in 157nm lithography.J Vac Sci Technol,1998,B16(6):3153
  • 9[8]Gwyn C W,Stulen R,Sweeney D,et al.Extreme ultraviolet lithography.J Vac Sci Technol,1998,B16(6):3142
  • 10[9]Liddle J A,Berger S D,Biddick C J,et al.The scattering with angular limitation in projection electron-beam lithography (SCALPEL) system.Jpn J Appl Phys,1995,34(Part 1):6663

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