稀土掺杂NiCrSi高阻靶材制备及镀膜性能研究

Preparation and Coating Performance Research of Rare Earth Doped NiCrSi Target with High Resistance

采用真空热压烧结法制备稀土掺杂NiCrSi高阻合金靶材。利用X射线衍射仪、金相显微镜、扫描电镜、EDS能谱仪等表征手段测试分析靶材物相组成、显微组织及微区元素分布。同时将所制备靶材溅射沉积金属膜电阻器,研究稀土元素掺入种类对电阻器阻值稳定性的影响。结果表明,稀土掺杂NiCrSi高阻靶材由基体相CrSi2和少量的CrSi、Ni3Si相混合而成。靶材外观平整无裂纹,组织致密无孔隙,相对密度均在96%以上;晶粒尺寸约为20μm,大小分布均匀。掺入La、Ce、Pr、Nd后,靶材组织中Zr析出相减少,Zr元素偏聚分布得到显著改善。溅射沉积的金属膜电阻器电阻温度系数小于±25×10^-6/℃;与未添加稀土元素的NiCrSi电阻器相比,加入Pr后,电阻器电阻温度系数在高低温区差值降至22×10^-6/℃左右,变化幅度小,阻值稳定性高;加入Nd后,电阻温度系数差值变化幅度大,阻值稳定性较差。

Rare earth doped NiCrSi targets with high resistance were synthesized by vacuum hot pressing sintering method.The crystal phase,microstructure and composition distribution of alloy targets were characterized by using X-ray diffraction,optical microscopy,scanning electron microscope and energy diffraction spectrum.At the same time,the prepared metal film resistors were investigated to study the effect of rare earth elements on the resistance stability of resistors.The result shows that rare earth doped NiCrSi targets are consisted of CrSi2 matrix phase,CrSi and Ni3Si phase.The relative densities are above 96%.The crystallite sizes are about 20μm with homogeneous distribution.Zr precipitated phase reduced in the microstructure for La,Ce,Pr or Nd doped NiCrSi targets.Besides,the segregation of Zr element was improved.The resistance temperature coefficient of metal film resistor is less than±25×10^-6/℃.Compared with the NiCrSi resistor without adding rare earth elements,resistance temperature coefficient in the high and low temperature difference reduces to about 22×10^-6/℃,which is small changes in the amplitude and high resistance stability after adding Pr element.After adding Nd element,the difference of resistance temperature coefficient is large and the resistance stability is poor.