摘要
SrTi1-yMgyO3 films were synthesized through sol-gel method on p^+-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi1-yMgyO3 films were investigated. All SrTi1-yMgyO3 films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y=0.08, the SrTi1-yMgyO3 films show the largest RHRS/RLRS of 105 and better fatigue endurance after 103 cycles. When y≥0.08, the distribution of Vset and Vreset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y=0.16.
SrTi1-yMgyO3 films were synthesized through sol-gel method on p+-Si substrates. The effects of Mg doping concentration on the microstructure, switching behavior and properties of SrTi1-yMgyO3 films were investigated. All SrTi1-yMgyO3 films are polycrystalline, but the grain becomes coarser, and the number of holes is reduced when the Mg doping content increases from 0.04 to 0.16. SrTi1-yMgyO3 films with different Mg doping concentrations all show bipolar resistive switching behaviors but display some differences in switching properties. When y = 0.08, the SrTi1-yMgyO3 films show the largest RHRS/RLRS of 105 and better fatigue endurance after 103 cycles. When y ≥ 0.08, the distribution of Vset and Vreset is narrow, indicating good stability of writing and erasing data for a resistive random access memory. At high-resistance state, the dominant conduction mechanism of SrTi1-yMgyO3 films is the Schottky emission mechanism. However, at low-resistance state, the dominant conduction mechanisms are the filamentary conduction and changes to space charge limited current when y = 0.16.
作者
ZHANG Wenbo
WANG Hua
张文博;王华;XU Jiwen;LIU Guobao;XIE Hang;YANG Ling(School of Materials Science and Engineering, Guilin University of Electronic Technology)
基金
Funded by the Guangxi Natural Science Foundation(2015GXNSFAA139253)
