摘要
近年来,随着氧化镓(Ga2O3)晶体生长技术取得突破性进展,氧化镓材料及器件的研究与应用成为国际上超宽禁带半导体领域的研究热点。综述了β-Ga2O3衬底的一些优点以及面临的挑战,重点介绍了如何实现良好的欧姆接触。围绕采用低功函数金属、表面预处理、衬底掺杂和引入中间层的方法,阐述了目前国际上金属/β-Ga2O3欧姆接触的最新研究进展。总结了不同实验条件下可以获得的比接触电阻,目前可以获得的最低比接触电阻是4.6×10^-6Ω·cm^2。最后,预测未来金属/β-Ga2O3欧姆接触的主要研究方向是提高欧姆接触的热稳定性。
In recent years,with the breakthrough of gallium oxide (Ga2O3)crystal growth technology, the research and application of Ga2O3 materials and devices become an international research hotspot in the field of ultra-wide band gap semiconductors.The advantages and challenges of theβ-Ga2O3substrate are overviewed,and how to achieve good Ohmic contact is introduced emphatically.The latest international research progresses of metal/β-Ga2O3Ohmic contact are illustrated, including the adoption of low work function metal,surface pretreatment,substrate doping and introducing interfacial layers.The specific contact resistance obtained under different experimental conditions is summarized,the currently obtained lowest specific contact resistance is 4.6×10^-6 Ω·cm^2.Finally,it is predicted that the main direction for future metal/β-Ga2O3 Ohmic contact is to improve the thermal stability of Ohmic contact.
作者
杨凯
刁华彬
赵超
罗军
Yang Kai;Diao Huabin;Zhao Chao;Luo Jun(School of Microelectronics,University of Science and Technology of China,Hefei 230000,China;Integrated Circuit Advanced Process R&D Center,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《微纳电子技术》
北大核心
2019年第9期681-690,共10页
Micronanoelectronic Technology
