试验设计在Y电容器设计中的运用

Application of DOE in the Design of Y Capacitor

Y电容器的3个主要性能指标---电容量、损耗角正切和耐电压取决于介质材料芯片的设计,但击穿电压则更能考核Y电容器的耐电压特性。以Y电容器芯片为研究对象,运用Minitab软件试验设计响应曲面模型、试验数据和试验设计提供的"预测、重叠等值线图、响应优化器"等分析方法,对Y电容器芯片的设计进行了验证和优化,结果表明,通过试验设计方式,可以快速地为芯片选型设计找准影响因子、指明改进方向;同时还可节省设计时间和经费。

Capacitance,loss tangent and withstand voltage are the three main performance indicators of Y capacitors,and they mainly depend on the design of the dielectric material chip. But the breakdown voltage can better evaluate the voltage resistance charactcristics of Y capacitors. Taking Y capacitor chip as the research object,the design of Y capacitor chip is verified and optimized by using the Minitab software DOE response surface model,test data and the "predictive overlapping contour map and response optimizer" provided by DOE.The results show that through DOE,the influencing factors can be found quickly for the chip design,the direction of improvement can be pointed out,and design time and cost can be saved at the same time.