小像元红外探测器读出电路设计研究

Research on ROIC design of small pixel infrared detector

介绍了基于SMIC0.18μm 3.3V工艺设计研究的第一款小像元红外探测器读出电路,间距10μm,规模1024×1024。文章详细介绍了像素输入级以及列级、输出级运放的设计,为提高线性摆伏,设计选用了低阈值NMOS管nmvt33,仿真分析证明低阈值管nmvt33的噪声性能优于普通管n33;版图设计对关键信号线和敏感点采取隔离处理措施,对像元间串扰进行了仿真分析,有效控制了信号串扰。电路经测试使用各项功能正常,最大电荷处理能力达到4.3Me^-,动态范围≥65dB,读出速率达到10MHz,性能指标满足设计要求。

In this paper,the first readout circuit of small pixel infrared detector based on SMIC 0.18 μm 3.3 V process design is introduced.The readout circuit has a spacing of 10μm and a size of 1024×1024.The design of pixel input stage and column stage and output stage operational amplifier is introduced in detail.In order to improve the linear swing voltage,a low threshold transistor(nmvt 33) is selected.The simulation result shows that the noise performance of nmvt 33 is better than that of ordinary transistor(n 33).In layout design,isolation measures are adopted for key signal lines and sensitive points.Crosstalk between pixels is simulated and analyzed,and signal crosstalk is effectively controlled.The circuit has been tested and used with normal functions.Its maximum charge handling capacity is 4.3 Me -,dynamic range is more than 65 dB,readout rate is 10 MHz,and performance index meets the design requirements.