摘要
由于小信号等效电路模型参数的精确提取是高频噪声建模的基础,利用噪声矩阵的变换,给出了硅锗异质结双极型晶体管(SiGe HBT)小信号等效噪声电路的建模过程,从器件测量的四个噪声参数中提取了电流散粒噪声,验证了小信号等效噪声电路的有效性.
Because the accurate extraction of parameters of small-signal equivalent circuit model was foundation of high-frequency noise modeling,the modeling procedure of small-signal equivalent noise circuit of SiGe HBT was presented using transformation of noise matrix.Shot noise is extracted from measured four noise parameters of device,and the effectiveness of the small-signal equivalent noise circuit here is verified.
作者
曾洪波
王军
ZENG Hongbo;WANG Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang,Sichuan,621010,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2019年第4期250-253,263,共5页
Research & Progress of SSE
关键词
硅锗异质结双极型晶体管
小信号等效电路模型
噪声建模
噪声矩阵变换
silicon-germanium heterojunction bipolar transistors(SiGe HBT)
small signal equivalent-circuit model
noise model
transformation of noise matrix
