摘要
报道了采用多层布线的101.6mm(4英寸)0.7μm InP HBT圆片工艺.器件工艺中台面均采用湿法腐蚀工艺,结合自对准光刻和BCB互联平坦化工艺,并集成了金属薄膜电阻和MIM电容.研制得到的0.7μm InPHBT器件电流增益截止频率(fT)为330GHz,最大振荡频率(fmax)为300GHz,可满足100GHz以下各频段的混频、倍频、放大等微波集成电路以及20GHz以下数模混合集成电路的设计需求.
A 101.6mm(4inch)0.7μm InP HBT wafer-fabrication method with multilayer metal interconnections was reported.Wet mesa etching,self-alignment lithography and BCB flattening technology were used and developed in this InP HBT device fabrication process.Metal film resistor and MIM capacitor were also integrated in the process.A current gain cutoff frequency(fT)of 330GHz and a maximum oscillation frequency(fmax)of 300GHz are measured,which can meet the needs of mixed signal integrated circuit under 20GHz and microwave integrated circuit under 100GHz operating frequency, including mixer,frequency multiplier and amplifier.
作者
戴鹏飞
李征
戴姜平
常龙
姚靖懿
程伟
任春江
DAI Pengfei;LI Zheng;DAI Jiangping;CHANG Long;YAO Jingyi;CHENG Wei;REN Chunjiang(Nanjing Electronic Devices Institute,Nanjing,210016,CHN)
出处
《固体电子学研究与进展》
CAS
北大核心
2019年第4期301-305,共5页
Research & Progress of SSE
关键词
磷化铟异质结双极晶体管
制造工艺
高集成度
多层布线
indium phosphide heterojunction bipolar transistor(InP HBT)
fabrication technology
high-integrated
multilayer interconnections
