染料敏化太阳电池TiO2缓冲层厚度对性能的影响

Effect of thickness of TiO2 buffer layer on performance of dye-sensitized solar cells

影响染料敏化太阳电池性能因素较多。用水热法制备不同维数的TiO2纳米棒阵列作太阳电池缓冲层,其光电转换效率低。为深入研究TiO2缓冲层厚度与染料敏化太阳电池性能之间关系,采用凝胶法处理实验原料制备缓冲层薄膜,将缓冲层薄膜和TiO2纳晶胶体制备成染料敏化纳晶多空TiO2电极,将TiO2电极和镀铂电极组装成染料敏化太阳电池(DSSC)。利用仪器测试和表征缓冲层薄膜。数据表明:缓冲层薄膜结构和颗粒间连接性的修正对电子的传递有积极作用,DSSC无缓冲层时,染料敏化太阳电池短路电流、开路电压为10.06mA/cm^2和0.707V;有缓冲层,测试数据随厚度呈一定规律性变化,且厚度为10μm时,电池转换效率最大,短路电流、开路电压为11.42mA/cm^2、0.724V。

There are many factors affecting the performance of dye-sensitized solar cells. The TiO2 nano-rod array with different dimensions as solar cell buffer layer was prepared by hydrothermal method, and the photoelectric conversion efficiency is low. The research method of the effect of buffer layer thickness on the performance of dye-sensitized solar cell was put forward. The gel method was used to treat the raw materials to obtain the buffer layer film. The buffer layer film and TiO2 nanocrystalline colloid were used to prepare dye-sensitized nanocrystalline multi-hollow TiO2 electrode, and the prepared electrode and platinum-plated electrode were assembled into DSSC. The buffer layer film was characterized by different experimental instruments. The experimental results show that the modification of the buffer layer film structure and intergranular connectivity has positive effect on electron transport. The short-circuit current and open-circuit voltage of DSSC without buffer layer film are 10.06 mA/cm^2 and 0.707 V. The test data of DSSC with buffer layer film varies regularly with thickness, and when the thickness is about 10.0 μm, the photoelectric conversion efficiency is the highest with the short-circuit current and open-circuit voltage of 11.42 mA/cm^2 and 0.724 V.