铱衬底上异质外延单晶金刚石:过程与机理

Heteroepitaxial Growth of Single Crystal Diamond Films on Iridium: Procedure and Mechanism

金刚石因其独特的物理化学性质,在探测器、光电子器件等领域得到了广泛的应用,单晶金刚石更是因为具有大幅度提高这些器件功能的潜力而引起了众多学者的关注。目前在铱(Ir)衬底上异质外延生长的单晶金刚石具有最大尺寸和较为优异的生长质量。本文介绍了可用于外延金刚石的不同结构的衬底以及金刚石在铱(Ir)衬底上的形核和生长过程,重点阐述了金刚石偏压辅助形核(BEN)和外延横向生长(ELO)的机理,以及衬底图形化形核生长技术,指出了目前研究存在的不足,并对金刚石异质外延理论和实验研究方向进行了展望。

Due to its unique physical and chemical property, diamond is widely used in many fields such as detectors and optoelectronic devices. Many scholars’ attention is drew into single crystal diamond because of its potential to significantly increase the functionality of these devices. Presently, single crystal diamonds grown heteroepitaxially on iridium(Ir) substrates reach the largest size and an excellent growth quality. In this paper, substrates with different structures for nucleation and growth processes of epitaxial diamond are introduced. The mechanisms of diamond nucleation by Bias Enhanced Nucleation(BEN) method and growth undergoing an Epitaxial Lateral Overgrowth(ELO) process are described, including technique of Patterned Nucleation and Growth(PNG). Limitations of current study are pointed out, and the future development of heteroepitaxial theory and experiment are also forecasted in this paper.