抑制SiC MOSFET串扰的栅极驱动电路设计

Gate Driver Circuit Design for Suppressing SiC MOSFET Crosstalk

相较于硅(Si)器件,碳化硅(SiC)金属氧化物半导体场效应晶体管(MOSFET)具有更高的开关频率,使得传统驱动下的SiCMOSFET桥臂串扰现象更加严重。为了抑制桥式电路中的串扰问题,在此基于有源串扰抑制方法,提出了一种改进型栅极驱动电路。首先,从理论上阐述了串扰产生的原理。其次,介绍了抑制串扰的驱动电路设计方法,分析了驱动电路的工作原理,给出了设计参数。最后搭建了双脉冲测试实验平台,通过实验验证了所提驱动电路对抑制串扰的有效性。

Compared with silicon (Si) devices, silicon carbide ( SiC ) metal-oxide-semiconductor field effect transistor (MOSFET) has higher switching frequency, which results in more serious crosstalk of bridge arm of SiC MOSFET under traditional driver. In order to give full play to the advantages of SiC devices and suppress crosstalk in bridge circuits, an improved gate driver circuit is proposed, combining with active crosstalk suppression method.Firstly, the generation principle of crosstalk is described.In addition, the design method of the drive circuit for suppressing crosstalk is introduced, the working principle of the drive circuit is analyzed, and the design parameters are given. Finally, a double pulse test platform is built to verify the effectiveness of the drive circuit proposed to suppress crosstalk.