摘要
Amorphous indium-gallium-zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications;however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm^2-V^-1·s^-1 and on/off current ratio of ~ 10^6. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.
基金
supported by the National Natural Science Foundation of China (No.51672229)
the General Research Fund (CityU 11211317)
the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO.JCYJ20170818095520778)
a grant from the Shenzhen Research Institute, City University of Hong Kong.
