非晶态Bi3.15Nd0.85Ti3O12薄膜的低波动阻变特性研究

Resistive Switching with Low Fluctuation in Amorphous Bi3.15Nd0.85Ti3O12 Thin Films

基于化学溶液法在Pt/Ti/SiO2/Si衬底上制备了非晶态Bi3.15Nd0.85Ti3O12薄膜,研究了其表面形貌、介电特性和阻变特性.结果表明:非晶态Bi3.15Nd0.85Ti3O12薄膜无明显晶界存在,其P-E和C-V曲线无滞后特征,其I-V曲线展示了双极性阻变行为.高低阻态的导电机制研究表明该双极性阻变行为由氧缺陷导电细丝断开/连接主导.通过与氧缺陷导电细丝主导的晶态Bi3.15Nd0.85Ti3O12薄膜基阻变行为对比,发现非晶态Bi3.15Nd0.85Ti3O12薄膜阻变的波动性较小,这与其无晶界密切相关.该研究可为开发低波动的阻变器件提供一定指导.

Amorphous Bi 3.15 Nd 0.85 Ti 3 O 12 thin films were fabricated on Pt/Ti/SiO 2 /Si substrates by chemical solution deposition, and their surface topography, dielectric and resistive switching properties were studied. The BNT thin films show amorphous structure without obvious grain boundary, the P-E and C-V curves show no hysteretic, and the I-V curves show bipolar resistive switching mainly induced by the formation/rupture of conductive filament. The fluctuation of the resistive switching for the amorphous BNT based devices is much smaller than the one for the polycrystalline BNT thin films based devices during the test of repeatability and retention, which is closely related to no grain boundary in the amorphous films. The results would be guidance for developing the high stable resistive switching devices.