霍尔传感器响应时间的物理仿真分析

Physical simulation analysis of response time of Hall sensor

针对互补金属氧化物半导体(CMOS)霍尔传感器的灵敏度和采集带宽问题,对CMOS霍尔传感器的时间限制进行了仿真分析。对现代物理模拟器对CMOS霍尔传感器的瞬态特性进行分析,采用CMOS技术实现了方形霍尔传感器的三维模型,通过电流输运模型对硅器件的磁场效应进行了数值模拟。为了分析响应时间,对整个电路进行了混合模SPICE物理模拟,即三维器件加偏压方案。仿真结果表明:模型化设备的响应时间很快,采集带宽在兆赫范围内。沉降时间主要取决于传感器的物理结构,更高浓度的N孔可以实现更快的霍尔器件,但这将降低传感器的灵敏度。

Aiming at the problem of sensitivity and acquisition bandwidth of CMOS Hall sensor,time limit of CMOS Hall sensor is simulated and analyzed.Firstly,the transient characteristics of CMOS Hall sensor are analyzed by modern physical simulator.Secondly,the three-dimensional model for square Hall sensor is realized by CMOS technology.Finally,the magnetic field effect of silicon device is simulated by current transport model.In order to analyze on response time,the whole circuit is simulated by hybrid mode SPICE,that is,three-dimensional device plus bias scheme.The simulation results show that the response time of the modeled device is very fast and the acquisition bandwidth is within MHz.Settlement time mainly depends on physical structure of the sensor.Higher concentration of N-holes can achieve faster Hall devices,but this will reduce the sensitivity of the sensor.