摘要
采用单靶磁控溅射方法在不同溅射时间下制备了铜铟镓硒薄膜,并且利用激光诱导击穿光谱技术实现对铜铟镓硒薄膜中元素含量比的快速定量分析。结果表明:随着溅射时间延长,Ga与(In+Ga)的谱线强度比值以及薄膜的禁带宽度同步变化,均呈先减小后增大的规律;铜铟镓硒薄膜的激光诱导击穿光谱图以及谱线分析、几种元素辐射强度比值的快速定量分析都表明,激光诱导击穿光谱技术能够间接地实现对铜铟镓硒薄膜中元素含量比的快速检测,能够在铜铟镓硒薄膜的性能分析以及制备参数优化方面发挥辅助作用。
Herein, the single-target magnetron sputtering method is used to prepare Cu(In, Ga) Se2 thin films at various sputtering times, and rapid quantitative analysis of elemental content ratios of the Cu(In,Ga)Se2 thin films is performed using laser-induced breakdown spectroscopy. Results show that the ratio of the Ga/(In+Ga) spectral line intensities and the forbidden bandwidth of the film vary synchronously. As the sputtering time increases, both parameters initially decrease and subsequently increase. This shows the potential of LIBS in the field of metal thin film analysis;it can play an auxiliary role in the performance analysis of Cu (In, Ga) Se2 thin films and the optimization of preparation parameters.
作者
刘世明
修俊山
刘云燕
Liu Shiming;Xiu Junshan;Liu Yunyan(School of Physics and Optoelectronic Engineering , Shandong University of Technology , Zibo , Shandong 255049, China)
出处
《中国激光》
EI
CAS
CSCD
北大核心
2019年第9期283-288,共6页
Chinese Journal of Lasers
基金
国家自然科学基金(11704228)
山东省自然科学基金(ZR2016AQ22)
关键词
光谱学
激光诱导击穿光谱
薄膜分析
光学禁带宽度
铜铟镓硒
磁控溅射
spectroscopy
laser-induced breakdown spectroscopy
thin film analysis
optical forbidden bandwidth
Cu(In, Ga)Se2
magnetron sputtering
