摘要
A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.
A Te-free binary phase change material Sb Bi is proposed as a new inorganic photoresist for heat-mode lithography. It shows good film-forming ability(surface roughness <1 nm), low threshold power for crystallization(2 m W), and high etching selectivity(15:1). Line-type, dot-type, and complex pattern structures with the smallest feature size of 275 nm are fabricated on Sb Bi thin films using a 405 nm diode laser direct writing system. In addition, the excellent grating structures with a period of 0.8 μm demonstrate that thermal interference does not affect the adjacent microstructures obviously. These results indicate that Sb Bi is a promising laser heat-mode resist material for micro/nanostructure fabrication.
作者
Kui Zhang
Zhengwei Wang
Guodong Chen
Yang Wang
Aijun Zeng
Jing Zhu
Syarhei Avakaw
Heorgi Tsikhanchuk
张奎;王正伟;陈国东;王阳;曾爱军;朱菁;Syarhei Avakaw;Heorgi Tsikhanchuk(Laboratory of Micro-Nano Optoelectronic Materials and Devices,Key Laboratory of Materials for High-Power Laser,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;KBTEM-OMO Joint Stock Company,Minsk 220033,Republic of Belarus)
基金
partially supported by the National Natural Science Foundation of China(Nos.51672292and 61627826)
the International Science&Technology Cooperation Program of China:Intergovernmental International Cooperation Program in Science and Technology Innovation(No.2016YFE0110600)
the International Science&Technology Cooperation Program of Shanghai(No.16520710500)
