铁电场效应晶体管及其反相器的TCAD模拟研究

TCAD Simulation Study on Ferroelectric Field Effect Transistor and Its Inverter

以铁电场效应晶体管(Ferroelectric Field Effect Transistor,FeFET)为存储单元的铁电存储器具有低功耗、高密度、高速度、抗辐射和非挥发性等优点,在航空航天以及民用消费电子中都有广阔的应用前景.但是,对于由FeFET构成的同时具有逻辑功能与存储功能的门电路(Ferroelectric Complementary Metal-Oxide-Semiconductor,FeCMOS),目前的研究工作还相对较少.用FeCMOS作为铁电存储器的外围读写电路,理论上可以大大增强其抗辐射能力.因此,该文以金属-铁电层-绝缘层-半导体(Metal gate-Ferroelectric layer-Insulation layer-Semiconductor,MFIS)结构的FeFET为研究对象,利用TCAD(Technology Computer Aided Design)软件中的器件电学性能仿真模块,在不同器件参数下对FeFET及其构成的FeCMOS反相器进行了细致的电学性能模拟仿真.

Ferroelectric memories with ferroelectric field effect transistors (FeFETs) as memory cells have the advantages of low power consumption,high density,high speed,radiation resistance and non-volatility,which is considered to have broad application prospects in aerospace and consumer electronics.However,the current research work is still lacking for the logic function and memory function gate circuit (FeCMOS) composed of FeFET.Using FeCMOS as the peripheral read/write circuit of FeRAM can theoretically greatly enhance its radiation resistance.In this paper,the electrical performance of metal-ferroelectric-insulator- semiconductor (MFIS) structure FeFETs and FeCMOS were carefully simulated by using TCAD software under different device parameters.