2T2C铁电存储单元读写电路的单粒子翻转效应研究

Study on Single-Event-Upset Effect of 2T2C Ferroelectric Memory Cell Read-Write Circuit

针对2T2C铁电存储单元读写电路进行了单粒子翻转效应的仿真模拟,研究了单粒子入射读写电路的不同敏感节点对存储数据的影响,并分析了数据读写出错的内在机制.结果表明:单粒子入射存储阵列中的字线晶体管时,存储数据未发生翻转,这主要是因为铁电电容极化信息波动后又恢复至原状态;单粒子入射外围电路中的板线激发器和灵敏放大器时,存储数据发生了翻转,这主要是因为外围电路产生的单粒子瞬态脉冲造成数据读出出错,进而导致了回写数据翻转.

In this paper,the single-event-upset effect of 2T2C ferroelectric memory cell read-write circuit is studied.The influence of sensitive nodes on the stored data is studied,and the internal mechanism of read and write errors is analyzed.The results show that the data is not flipped when the single particle is incident on the word-line transistor of the memory array,which is mainly because the ferroelectric capacitance polarization fluctuates and then returns to the original state rapidly.The stored data upset occurs when the single particle enters the plate-line exciter or the sense amplifier,which is mainly because the single-event transient pulse generated in the peripheral circuit causes data readout errors and in turn causes the write-back data to be flipped.