硫化物钝化对InAs纳米线光学特性的影响

The influence of sulfide passivation on optical properties of InAs nanowires

针对InAs纳米线表面氧化造成的发光效率低的问题,采用十八硫醇和硫化铵钝化了由化学气相沉积设备生长的闪锌矿结构的InAs纳米线。对硫化物钝化前后的InAs纳米线进行温度依赖的光致发光光谱测试。实验结果表明,十八硫醇和硫化铵钝化的InAs纳米线在25 K温度下的发光效率与未钝化的InAs纳米线相比分别提高了~ 6倍和~7倍,此外,可以在室温下探测到硫化铵钝化的InAs纳米线的光致发光,这为未来基于InAs纳米线的中红外纳米光子器件提供了可能性。

To solve the problem of low luminescence efficiency caused by the surface oxidation of InAs nanowires, C18H38S and (NH4)2S were adopted to passivate zinc blende (ZB) InAs nanowires synthesized by chemical vapor deposition (CVD). Photoluminescence (PL) spectra of (before and after sulfide passivation) InAs nanowires were performed. The experimental results show that the PL emission efficiency of C18H38S and (NH4)2S passivated InAs nanowires are ~ 6 times and ~ 7 times higher than that of unpassivated InAs nanowires at 25 K, respectively, in addition, the PL of (NH4)2S passivation InAs nanowires is detected at room temperature, which provides a possibility for future InAs nanowires based middle infrared nanophoton devices.