摘要
本文基于TSMC 28nm HPC工艺,设计了一款应用于900mV低压差线性稳压器(Low output Voltage,LDO)的高精度自偏置带隙基准源。仿真结果表明,在1.8V的工作电压下,该带隙基准的输出电压接近600mV。tt模式,温度范围-40℃到125℃,该带隙基准的温度系数低至8.8ppm/℃,具有良好的温度特性。tt模式,27℃时,低频的电源抑制比达到78.8dB,静态电流15.4μA。
Based on TSMC 28nm HPC technology,this paper design a high-precision self-bias band gap reference source applied to 900mV low-output voltage.The simulation result shows that output voltage of the band gap reference is close to 600mV under the working voltage of 1.8V.In tt mode,the temperature coefficient of the band gap reference is as low as 8.8ppm/℃in the temperature of-40℃to 125℃,showing good temperature characteristics.In tt mode,the low-frequency power supply rejection ratio reach 78.8dB,and the static current is 15.4μA at 27℃.
作者
莫啸
李冬
张明科
孔德鑫
MO Xiao;LI Dong;ZHANG Ming-ke;KONG De-xin(The 38th Research Institute of China Electronic Science and Technology Group Corporation ,Hefei Anhui 231500)
出处
《数字技术与应用》
2019年第8期75-77,共3页
Digital Technology & Application
关键词
自偏置
带隙基准
温度系数
电源抑制比
self-bias
bandgap reference
temperature coefficient
power supply rejection ratio
