四探针法测试半导体掺杂浓度的实验研究

Research of Four-Probe Method for Semiconductor Doping Concentration Experiment

为了解决半导体掺杂浓度的测试问题,需要采用简单易行的方法对半导体进行测试。在微电子技术领域,四探针技术一直是测量电阻率的常用方法。结合吉林大学在半导体器件物理与实验精品课程的建设,以训练学生对半导体物理学专业知识的理解和掌握,笔者对四探针法测试半导体掺杂浓度进行了实验研究。通过建立半无限大和无限薄层两个理论模型,对不同厚度半导体材料的电阻率测试方法进行了实验研究,并对原理进行了讨论。为了解决商用测试设备昂贵且无法满足实验教学需求的问题,笔者提出自制实验测试装置,采用钨合金的简易手动探针台,并根据实验需要自行设计了四探针测试架。实践应用表明:四探针测试系统的建立可以完成测量半导体掺杂浓度的任务,满足了半导体物理实验的教学需求,取得了较好的教学效果。

To solve the problem of semiconductor doping concentrations, it is necessary to test the semiconductor in a simple and easy way. Four-probe method is a common method of measuring resistivity in the field of microelectronics technology. Combining the construction of the semiconductor device physics and experiment course, the experiment of testing the doping concentration of semiconductor by four-probe method was developed. Through the establishment of two theoretical models of semi-infinite sample model and infinite thin-layer sample model, the resistivity test methods for semiconductor materials with different thicknesses are studied, and the principle is discussed. In order to solve the problem that the commercial equipment is expensive and can not meet the needs of experimental, the author proposed to build a test system, using a simple manual probe station of tungsten alloy, and designed a four-probe test device according to the experimental needs. The practical application shows that the establishment of the four-probe test system meets the teaching requirements of semiconductor physics experiments.