U-MOSFET沟槽深度对特性影响的仿真分析

Simulation Analysis of the Influence of U-MOSFET Groove Depth on the Characteristics

U-MOSFET是在LDMOS和VDMOS基础上发展起来的一种功率半导体器件,具有大电流和低导通电阻、无少子存储效应、开关速度快、可工作于较高频率等优点,结合此类优点,利用Silvaco软件对U型槽深度对阻断特性和通态特性的影响进行仿真分析。通过观察仿真中沟槽深度的增加对器件阻断电压、导通电阻等的影响,综合探讨了在对U型槽底部氧化层厚度以及沟槽深度的调整中,考虑到对击穿电压和特征导通电阻的影响而需要做出的折衷。

U-MOSFET is a kind of power semiconductor device developed on the basis of LDMOS and VDMOS, which has the advantages of large current, low on-resistance, no minority storage effect, fast switching speed and being able to work at higher frequencies. Combining these advantages, the influence of U-groove depth on blocking characteristics and on-state characteristics is simulated and analyzed by using Silvaco software. By observing the influence of the increase of groove depth on the blocking voltage and on-resistance of the device in the simulation, the compromise that needs to be made considering the influence on the breakdown voltage and the characteristic on-resistance in the adjustment of the oxide layer thickness at the bottom of the U-shaped groove and the groove depth is comprehensively discussed.