新型反熔丝存储器内部修复电路设计

A New Design of Internal Repair Circuit for Antifuse Memory

针对反熔丝电路在存储器修复的设计与实现中存在的问题,介绍一种新的反熔丝存储器自检测自修复电路的设计方法。在存储器电路设计中增加冗余存储单元,对有缺陷的存储单元及地址做出更为合理的处理,以避免舍弃整个芯片。通过将读取编程数据与编程器写入数据进行比较,更有效地实现冗余存储单元地址的替换。使用冗余结构来提高存储器电路的可靠性,实现了在同一芯片内部进行自检测和自修复的功能,增加了电路调节的灵活性,提高了电路的普适性,同时可降低电路的维护及使用成本。

Aiming at the problems existing in the design and implementation of antifuse memory repairing, a new design method of self-detection and self-repair circuit for antifuse memory is introduced. Redundant memory cells are added to the memory circuit design to make more reasonable treatment for defective memory cells and addresses to avoid abandoning the whole chip. By comparing the read programming data with the programmer write data, the replacement of redundant memory cell addresses is realized more effectively. Redundant structure is used to improve the reliability of the memory circuit, realizing the functions of self-detection and self-repair in the same chip, increasing the flexibility of circuit adjustment, improving the universality of the circuit, and simultaneously reducing the maintenance and use cost of the circuit.