摘要
介绍了一种以损耗分析为依据的MOSFET选型方法。基于栅极驱动的二阶模型对不同栅极电阻下MOSFET导通时间产生的损耗进行了对比分析,同时完成了印制板寄生电感、开关频率等栅极驱动影响因素的仿真验证。对同步BUCK变换器中MOSFET选型应用进行分析与实验,结果表明该方法可用于工程实践中MOSFET选型及驱动设计分析,可以有效提高MOSFET设计的可靠性。
A MOSFET selection method based on loss analysis is introduced in this paper.Based on the second-order model of gate drive of MOSFET, the loss caused by the on-time of MOSFET under different gate resistances is compared and analyzed.Simultaneously, the simulation validation of the influence factors of gate drive such as the printed circuit board(PCB) parasitic inductance and the switching frequency are completed.The application case of MOSFET selection in synchronous BUCK converter is analyzed and the experiments is completed.The results show that this method can be used in the selection and driving design of MOSFET in engineering practice, and can effectively improve the reliability of MOSFET design.
作者
陈帅
郗小鹏
张勇
Chen Shuai;Xi Xiaopeng;Zhang Yong(Tianjin Zhongwei Aerospace Data System Technology Ltd,Tianjin 300450,China)
出处
《单片机与嵌入式系统应用》
2019年第11期75-77,81,共4页
Microcontrollers & Embedded Systems
