半导体的禁带宽度与温度关系研究

Study on Temperature Dependence of Semiconductor Bandgap

半导体禁带宽度Eg与温度的依赖关系Eg(T)是一个基础的理论课题,对材料特性的认识具有极其重要的意义。目前,对不同半导体材料的Eg(T)研究存在多种半经验的理论模型,尚未形成定论,所以该课题仍然是一个基础研究的热点。文章梳理了近几十年来Eg(T)分析模型的发展历程,分析了Varshni模型以及基于晶格振动和电子声子作用发展出的四个半经验模型的优缺点,提出了新的问题,对Eg(T)研究的进一步发展以及基于声子特性改善光电子器件性能具有指导意义。

The dependence of the semiconductor’s forbidden band Eg on temperature Eg(T)is a basic theoretical subject which is of great significance for understanding the properties of material.At present,there are many semi-empirical theoretical models for the Eg(T)study on various different semiconductor materials and no conclusion has yet been established.So it is still a hot topic of basic research.The development of the Eg(T)analysis models in recent decades was combed,the advantages and disadvantages of Varshni model and the four semi-empirical models developed based on lattice vibration and electron-phonon interaction were analyzed,and new questions were raised.The conclusion will have a guiding significance for the further development of Eg(T)research and for improving the performance of optoelectronic devices based on understanding phonon characteristics.