摘要
基于折叠插值ADC的研究,改善了平均电阻网络造成的边界效应。采用环形平均电阻网络、边界阻值取为等效电阻的方法来解决边界效应,同时提出了一种新型的边界折叠器结构。该结构应用于第一级边界折叠结构,能有效补偿边界过零点偏移,得到趋于准确的边界过零点,提高了ADC性能。基于TSMC 0.18μm CMOS工艺,在改善边界效应后对ADC进行仿真。结果表明,该ADC的ENOB为9.11bit,SFDR为61.69dB。
Based on the study of folded interpolation ADCs,the boundary effects caused by the average resistance network were improved.A ring-shaped average resistance network was used,and the boundary resistance was taken as the equivalent resistance to solve the boundary effects.Meanwhile,a new type of boundary folder structure was proposed.The structure was applied to the first-level boundary folding structure,which could effectively compensate the boundary zero-crossing offset,obtain more accurate boundary zero-crossing points,and improve the performance of the ADC.Based on the TSMC 0.18μm CMOS standard process,the ADC was simulated after improving the boundary effect.The results showed that the ADC had an ENOB of 9.11bit and an SFDR of 61.69dB.
作者
张宝娣
邓红辉
胡逸俊
ZHANG Baodi;DENG Honghui;HU Yijun(Institute of VLSI design,Hefei University of Technology,Hefei 230009,P.R.China)
出处
《微电子学》
CAS
北大核心
2019年第5期602-608,共7页
Microelectronics
基金
中央高校基本科研业务费专项资金资助项目(JD2016JGPY0003)
关键词
折叠插值ADC
边界效应
折叠器
平均电阻
folded interpolation ADC
boundary effect
folder
average resistance