摘要
本文研制了高导热低损耗的AlN陶瓷,制备的AlN陶瓷介电常数8.4,损耗角正切5×10^-4,常温热导率为186W/(m·K);同时研制出了热导率为192W/(m·K)的氮化铝陶瓷。完成了AlN的陶瓷金属封接工艺,封接件抗拉强度大于78MPa,制备了AlN陶瓷输能窗,钎焊后的AlN陶瓷金属封接件及输能窗检漏结果均气密,氦漏率小于1×10^-11Pa·m^3/s。本文研制的AlN陶瓷及封接工艺不但满足输能窗用介质材料的性能要求,还可以应用于微波管收集极及夹持杆等方面。
High thermal conductivity and low loss tangent AlN ceramics are prepared,which have dielectric constant of 8.42,loss tangent of 5×10^-4 and thermal conductivity of 186 W/(m·K)at room temperature.AlN ceramics with thermal conductivity of 192 W/(m·K)are also prepared.An AlN ceramic-metal sealing process is developed.With this process,the tensile strengths of the sealed parts are greater than 78 MPa.AlN microwave windows are prepared.The brazed AlN ceramic-metal parts and the microwave windows are hermetic,and the leakage rates of them are all less than 1×10^-11 Pa·m^3/s.The developed AlN ceramics and sealing process not only can meet the requirements of microwave windows,but also can be applied to collectors and support rods of microwave tubes.
作者
杨艳玲
鲁燕萍
王松
YANG Yan-ling;LU Yan-ping;WANG Song(Beijing Vacuum Electronics Research Institute,Beijing100015,China)
出处
《真空电子技术》
2019年第5期58-61,共4页
Vacuum Electronics
基金
装备预先研究资助项目(31512010502-1)
关键词
ALN陶瓷
输能窗
介电性能
热导率
Aluminum nitride ceramic
Microwave window
Dielectric constant
Thermal conductivity