摘要
介绍了碲锌镉晶片背面研抛机的工艺过程和原理,研究了研抛工艺中砂轮粒度、砂轮进给率、砂轮转速和工作台转速对晶片表面层损伤深度的影响。
In this paper,the process and principle of the CZT wafer lapping and polishing machine are introduced,the effect of the lapping and polishing wheel type,the wheel infeed rate,the wheel rotation speed and the chuck rotation speed on the wafer surface layer damage are studied.
作者
张文斌
郭俊伟
葛劢翀
Zhang Wenbin;Guo Junwei;Ge Maichong(The 45th Research Institute of CETC ,Beijing 100176,China)
出处
《电子工业专用设备》
2019年第5期26-28,47,共4页
Equipment for Electronic Products Manufacturing
关键词
碲锌镉
研抛
表面层损伤
CdZnTe
Lapping and polishing
Surface Layer Damage