期刊文献+

碲锌镉晶片研抛加工表面层损伤的研究

Study on the Surface Layer Damage of CZT Wafer Induced by Lapping and Polishing
下载PDF
导出
摘要 介绍了碲锌镉晶片背面研抛机的工艺过程和原理,研究了研抛工艺中砂轮粒度、砂轮进给率、砂轮转速和工作台转速对晶片表面层损伤深度的影响。 In this paper,the process and principle of the CZT wafer lapping and polishing machine are introduced,the effect of the lapping and polishing wheel type,the wheel infeed rate,the wheel rotation speed and the chuck rotation speed on the wafer surface layer damage are studied.
作者 张文斌 郭俊伟 葛劢翀 Zhang Wenbin;Guo Junwei;Ge Maichong(The 45th Research Institute of CETC ,Beijing 100176,China)
出处 《电子工业专用设备》 2019年第5期26-28,47,共4页 Equipment for Electronic Products Manufacturing
关键词 碲锌镉 研抛 表面层损伤 CdZnTe Lapping and polishing Surface Layer Damage
  • 相关文献

参考文献2

二级参考文献20

  • 1唐家钿,宋炳文,董先庆,欧明娣.碲镉汞晶体结构性质的电子显微术研究[J].红外技术,1994,16(6):22-26. 被引量:2
  • 2Li Bao,Chu Junhao,Zhu Jiqian, et al. Relationship between LPE growth condition and composition-in-depth profile of ( Hg, Cd) Te epifilm [ J ]. Chinese Journal of Semiconductors, 1996,17 ( 10 ) :721 - 728 ( in chinese).
  • 3Triboulet R, Tromson-carli A, Lorans D, et al. Substrate Issues for the growth of mercury cadmium telluride [ J ]. J. Electronic Materials, 1993,22: 827 - 834.
  • 4Young M L,Astles M G, Gough J S, et al. Control of the electrical properties of in-doped HgCdTe grown by MOVPE for IR detector applications [ J ]. Semicond Sci. Technol. , 1991,6:31 - 35.
  • 5M Pfeiffer, M Mühlberg. Interface shape observation and calculation in crystal growth of CdTe by the Vertical Bridgman Method[ J]. J. Cryst. Crowth,1992,118: 269 - 276.
  • 6J Friedel. Dislocations, Part One General Properties,International Series Monographs on Solid State Physics [ C ]. Pergamon Press LTD, 1964,3.
  • 7BK代因斯坦.现代晶体学[M](第二卷)[M].中国科学技术大学出版社,1992..
  • 8李宇杰.[D].西北工业大学,12.
  • 9S Sen, C S Liang, D R Rhiger, et al. Reduction of CdZnTe substrate defects and relation to epitaxial HgCdTe quality [J]. J. Electron. Materials, 1996,25:1188 - 1195.
  • 10David R Rhiger,Sanghanmitra Sen,J M Peterson. Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates [ J ]. J. Electron. Materials, 1997,26:515 - 523.

共引文献18

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部