绝缘栅双极晶体管的仿真设计方法

The Simulation Design Method of the Insulated Gate Bipolar Transistor

IGBT即绝缘栅双极型晶体管业已得到广泛的应用,高压大电流是其未来的发展方向,近年来已经应用在高压直流输电领域。随着功率容量的不断提升,对器件的设计制造提出了更高的要求。为了缩短设计周期,提高成品率,降低制造成本,应采用计算机进行仿真,可极大地提高工作效率。论文结合流片的情况应用ISE软件进行了仿真研究,结果表明,采用软件仿真的方法能够有效地指导器件的生产制造。

IGBT,i.e. insulated gate bipolar transistor,has been widely used. High voltage and high current are its future development direction. In recent years,insulated gate bipolar transistor has been applied in the field of high voltage direct current transmission. With the continuous improvement of power capacity,higher requirements are put forward for the design and manufacture of devices. In order to shorten the design cycle,improve the yield and reduce the manufacturing cost,the computer simulation should be used,which can greatly improve the work efficiency. The paper uses the ISE software to carry out simulation research in combination with the flow film. The results show that the software simulation method can effectively guide the manufacturing of the device.