摘要
Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out.
１ＩｎｔｒｏｄｕｃｔｉｏｎＭａｎｙｒｅｐｏｒｔｓｏｆｎｅａｒｉｎｆｒａｒｅｄｔｅｃｈｎｏｌｏｇｙａｐｐｌｉｃａｔｉｏｎａｒｅｐｕｂｌｉｓｈｅｄｉｎｒｅｃｅｎｔｙｅａｒｓ．Ｔｈｅｂｒｏａｄａｐｐｌｉｃａｔｉｏｎａｒｅａｓ，ｉｎｃｌｕｄｉｎｇｎｏｄａｍａ...
