摘要
The zinc sulfide electroluminescence(EL) thin film doped with erbium,fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surface states of the microcrystalline thin films is obtained.The transient EL spectroscopy of the thin film devices is measured and simulated by the formulae of different energy transfer mechanism.The results indicate that the formula of Gaussian line shape can fit well for description of transient EL process of zinc sulfide thin film doped with erbium.It shows that the surface states have important effect on the relaxation peaks during the decay process of EL for the thin film devices.
１ＩｎｔｒｏｄｕｃｔｉｏｎＺｉｎｃｓｕｌｆｉｄｅｉｓａⅡ－Ⅳｓｅｍｉｃｏｎｄｕｃｔｏｒｃｏｍｐｏｕｎｄｗｉｔｈｗｉｄｅｂａｎｄｇａｐ．Ｔｈｅｔｈｉｎｆｉｌｍｓｈａｖｅｅｘｃｅｌｅｎｔｃｈａｒａｃｔｅｒｓｏｆｅｌｅｃｔｒｏｌｕｍｉｎｅｓｃｅｎｃｅ（ＥＬ...
