摘要
The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.
The surface and interface electronic states of tris (8 hydroxyquinoline) aluminum (Alq 3)/indium tin oxide (ITO) were measured and analyzed by X ray photoelectron spectroscopy (XPS). The results indicated that, in Alq 3 molecule, the binding energy ( E b) of Al atoms is 70.7 eV and 75.1 eV, corresponding to Al(O) and Al(Ⅲ), respectively; The binding energy of C is 285.8 eV, 286.3 eV, and 286.8 eV, corresponding to C of C-C group, C-O, and C-N bond, respectively. N is the main peak locating at 401.0 eV, corresponding to N atom of C-N=C. O atoms mainly bond to H atom, with the binding energy of 533.2 eV. As the sputtering time of Ar + ion beam increases, Al 2p , C 1s , N 1s , O 1s , In 3d 5/2 and Sn 3d 5/2 peaks slightly shift towards lower binding energy, and Al 2p , C 1s and N 1s peaks get weaker, which contributes to diffusing the oxygen, indium and tin in ITO into Alq 3 layer.
基金
Foundationitem :NationalNaturalScienceFoundationofChina(No .60 0 760 2 3)
