Instability of nc-Si: H Films Fabricated by PECVD

Instability of nc-Si:H Films Fabricated by PECVD ①②

１ＩｎｔｒｏｄｕｃｔｉｏｎＴｈｅｍｅｔｈｏｄｏｆｇｌｏｗｄｉｓｃｈａｒｇｅｕｓｉｎｇｈｉｇｈｌｙｈｙｄｒｏｇｅｎ－ｄｉｌｕｔｅｄｓｉｌａｎｅａｓｒｅａｃｔｉｖｅｇａｓ（ａｎｄｉｎｓｏｍｅｃａｓｅｓ，ａｎｅｇａｔｉｖｅｂｉａｓｏｎｔｈｅｓｕｂｓｔｒａｔ...

An analysis is given to explain the instability of the high conductivity property of nc-Si:H fabricated. Detailed discussion is carried out concentrating on the conductivity and growth mechanism. It is assumed that the instability of the conductivity of the nc-Si:H stems from two part: the phase transition from nanocrystallites into a-Si:H, and the oxygen incorporation of the thin layer of the film, which contributes more to the effect when the film suffers the exposure to air. The theory is in agreement with the experiment and measurement.