Optimum Parameters of MgZnSSe/ZnSe BRAQ WET

Optimum Parameters of MgZnSSe/ZnSe BRAQWET

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摘要 A theoretical basis of optimally designed BRAQWET is pr esented. The optimum parameters of MgZnSSe/ZnSe BRAQWET are obtained by the ca lculation of band-structure according to the depletion approximation. A theoretical basis of optimally designed BRAQWET is pr esented. The optimum parameters of MgZnSSe/ZnSe BRAQWET are obtained by the ca lculation of band-structure according to the depletion approximation.

作者 SHIChang－xin K.Heime 等

机构地区 Inst.ofMicroelectron.Techn. Inst.ofSemicond.Electron.

出处《Semiconductor Photonics and Technology》 CAS 2000年第4期204-206,共3页 半导体光子学与技术（英文版）

基金 DeutschForschungsgemeinschaft (DFG )!(No .4 4 6CHV - 113 / 74 /O) NaturalScienceFoundationofChina!(NO .693 70 0 1)

关键词 BRAQWET Ⅱ-Ⅵ semiconductors Band structure Ⅱ-Ⅵ族半导体优化参数能带结构

分类号 TN304.25 [电子电信—物理电子学]

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Semiconductor Photonics and Technology

2000年第4期

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Optimum Parameters of MgZnSSe/ZnSe BRAQ WET

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