摘要
The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditions. The correlation of the low frequency electrical noise with surface non radiative current of devices is discussed. The results indicate the low frequency electrical noise of 980 nm DQWLs with high power is mainly 1/ f noise and has good relation with the device surface current at low injection.
The characteristics of low frequency electrical noise, voltage current ( V I ) and electrical derivation for 980 nm InGaAsP/InGaAs/GaAs high power double quantum well lasers(DQWLs) are measured under different conditions. The correlation of the low frequency electrical noise with surface non radiative current of devices is discussed. The results indicate the low frequency electrical noise of 980 nm DQWLs with high power is mainly 1/ f noise and has good relation with the device surface current at low injection.
基金
HuaweiS&TFoundationofShenzhengHuaweiTech.Co .Ltd .(No .990 1 81 0 3)andVisitingScholarFoundationofKeyLab.inUniversity
