摘要
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 (MIMIS)隧道发光结的结构、制备方法及发光特性。所制备的样品最大发光亮度达到 1.9cd/m2 、光谱的峰值波长移到了蓝绿光区 ,表明双势垒MIMIS隧道发光结的性能优于单势垒金属绝缘层半导体 (MIS)隧道发光结。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed. It shows better characteristics in comparison with MIS junction. The maximal luminance of the MIMIS devices is 1.9 cd/m 2, and their sprctrum peak appears in the blue area. The phenomena can be well explained according to resonant tunneling theory.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2002年第10期1275-1278,共4页
Acta Optica Sinica
基金
国家自然科学基金 (6 95 76 0 0 6 )
东南大学科学基金(92 0 6 0 0 10 84 )资助课题
