Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array

Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array

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摘要 The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the deduction is tested and verified. The crosstalk caused by oblique incident ray on a PIN detector array is analyzed. An integral expression of crosstalk factor in relation to incident angle and structure parameters is deduced and the correctness of the deduction is tested and verified.

作者 CAO Jun-kai (Chongqing Optoelectronics Research Institute, Chongqing 400060,CHN)

出处《Semiconductor Photonics and Technology》 CAS 2000年第1期29-33,共5页 半导体光子学与技术（英文版）

关键词 Si-photodiode Detector arrays CROSSTALK 硅光电二极管检测器阵列串扰 PIN CCD

分类号 TN364.2 [电子电信—物理电子学]

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1刘恩科，半导体物理学，1984年，194页

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Semiconductor Photonics and Technology

2000年第1期

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Analysis on Additional Crosstalk Caused by Oblique Incident Ray on PIN Detector Array

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