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Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires

Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires
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摘要 The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions. The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.
出处 《Semiconductor Photonics and Technology》 CAS 2001年第1期1-7,共7页 半导体光子学与技术(英文版)
基金 NaturalScienceFoundationofFujianProvinceofChina(No .E9910 0 5)
关键词 Optical gain V-groove quantum wires Hole subband structures 光增益 V型沟道量子线 分子束外延 MBE 孔带结构
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